| PART |
Description |
Maker |
| CBR10-J100 CBR10-J010 CBR10-J020 CBR10-J040 CBR10- |
SILICON GRIDGE RECTIFIER 10 AMPS, 100 THRU 1000 VOLTS 10 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Leaded Bridge Rectifier General Purpose
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| EH7502BS EH7506BS EH7508B EH7510B EH7512B |
Single Phase Bridge
75 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
75 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
MICROSEMI CORP-COLORADO
|
| 3506 3502 3510F 3506F 3506UF 3502UF 3510UF 3502F |
200 V - 1,000 V Three Phase Bridge 40.0 A - 60.0 A Forward Current 70 ns - 3000 ns Recovery Time 3 PHASE, 50 A, SILICON, BRIDGE RECTIFIER DIODE
|
Voltage Multipliers, Inc.
|
| 3402B 3402FB |
200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time 3 PHASE, 20 A, SILICON, BRIDGE RECTIFIER DIODE
|
Electronic Theatre Controls, Inc.
Voltage Multipliers, Inc.
|
| CBR1U-D020S CBR1U-D010S |
1.0 AMP ULTRA FAST BRIDGE RECTIFIER 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| KBPC3502 |
35 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
|
| GBPC602 |
3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
GENERAL SEMICONDUCTOR INC
|
| HD02-T-F |
0.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
DIODES INC
|
| MT200S |
25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
MICROSEMI CORP-COLORADO
|
| MP502 |
50 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
MICROSEMI CORP
|
| GBPC1002S-G |
10 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
SENSITRON SEMICONDUCTOR
|
|
